PBSS306PX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS306PX,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
2.1W
Terminal Form
FLAT
Frequency
100MHz
Base Part Number
PBSS306P
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
3.7A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 400mA, 4A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
100MHz
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
200
Height
6.35mm
Length
12.7mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.889511
$0.889511
10
$0.839161
$8.39161
100
$0.791662
$79.1662
500
$0.746851
$373.4255
1000
$0.704577
$704.577
PBSS306PX,115 Product Details
PBSS306PX,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 2A 2V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.There is a breakdown input voltage of 100V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 3.7A volts at Single BJT transistors maximum.
PBSS306PX,115 Features
the DC current gain for this device is 100 @ 2A 2V the vce saturation(Max) is 300mV @ 400mA, 4A the emitter base voltage is kept at 5V a transition frequency of 100MHz
PBSS306PX,115 Applications
There are a lot of Nexperia USA Inc. PBSS306PX,115 applications of single BJT transistors.