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PBSS306PX,115

PBSS306PX,115

PBSS306PX,115

Nexperia USA Inc.

PBSS306PX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS306PX,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 2.1W
Terminal Form FLAT
Frequency 100MHz
Base Part Number PBSS306P
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2.1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 3.7A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 400mA, 4A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 100MHz
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Height 6.35mm
Length 12.7mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.889511 $0.889511
10 $0.839161 $8.39161
100 $0.791662 $79.1662
500 $0.746851 $373.4255
1000 $0.704577 $704.577
PBSS306PX,115 Product Details

PBSS306PX,115 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 2A 2V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.There is a breakdown input voltage of 100V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 3.7A volts at Single BJT transistors maximum.

PBSS306PX,115 Features


the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS306PX,115 Applications


There are a lot of Nexperia USA Inc. PBSS306PX,115 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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