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ZXTP19020DFFTA

ZXTP19020DFFTA

ZXTP19020DFFTA

Diodes Incorporated

ZXTP19020DFFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP19020DFFTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-3 Flat Leads
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 176MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTP19020D
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Power - Max 1.5W
Transistor Application SWITCHING
Gain Bandwidth Product 176MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 5.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 175mV @ 550mA, 5.5A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 176MHz
Collector Emitter Saturation Voltage -44mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 7V
Height 1mm
Length 3mm
Width 1.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.31668 $0.95004
6,000 $0.29484 $1.76904
15,000 $0.29120 $4.368
ZXTP19020DFFTA Product Details

ZXTP19020DFFTA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 100mA 2V.With a collector emitter saturation voltage of -44mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 175mV @ 550mA, 5.5A.The emitter base voltage can be kept at 7V for high efficiency.176MHz is present in the transition frequency.A breakdown input voltage of 20V volts can be used.When collector current reaches its maximum, it can reach 5.5A volts.

ZXTP19020DFFTA Features


the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -44mV
the vce saturation(Max) is 175mV @ 550mA, 5.5A
the emitter base voltage is kept at 7V
a transition frequency of 176MHz

ZXTP19020DFFTA Applications


There are a lot of Diodes Incorporated ZXTP19020DFFTA applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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