ZXTP19020DFFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP19020DFFTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-3 Flat Leads
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
176MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTP19020D
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Power - Max
1.5W
Transistor Application
SWITCHING
Gain Bandwidth Product
176MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
5.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
175mV @ 550mA, 5.5A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
176MHz
Collector Emitter Saturation Voltage
-44mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
25V
Emitter Base Voltage (VEBO)
7V
Height
1mm
Length
3mm
Width
1.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
ZXTP19020DFFTA Product Details
ZXTP19020DFFTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 100mA 2V.With a collector emitter saturation voltage of -44mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 175mV @ 550mA, 5.5A.The emitter base voltage can be kept at 7V for high efficiency.176MHz is present in the transition frequency.A breakdown input voltage of 20V volts can be used.When collector current reaches its maximum, it can reach 5.5A volts.
ZXTP19020DFFTA Features
the DC current gain for this device is 300 @ 100mA 2V a collector emitter saturation voltage of -44mV the vce saturation(Max) is 175mV @ 550mA, 5.5A the emitter base voltage is kept at 7V a transition frequency of 176MHz
ZXTP19020DFFTA Applications
There are a lot of Diodes Incorporated ZXTP19020DFFTA applications of single BJT transistors.