BD679G Overview

In this device, the DC current gain is 750 @ 1.5A 3V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 30mA, 1.5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

BD679G Features

the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A

BD679G Applications

There are a lot of ON Semiconductor BD679G applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter