BDV65BG Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 5A 4V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 20mA, 5A.Emitter base voltages of 5V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (10A).Maximum collector currents can be below 10A volts.

BDV65BG Features

the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 10A

BDV65BG Applications

There are a lot of ON Semiconductor BDV65BG applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver