BDW23CTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BDW23CTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BDW23
Power - Max
50W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
3V @ 60mA, 6A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
6A
BDW23CTU Product Details
BDW23CTU Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BDW23CTU Features
the DC current gain for this device is 750 @ 2A 3V the vce saturation(Max) is 3V @ 60mA, 6A
BDW23CTU Applications
There are a lot of ON Semiconductor BDW23CTU applications of single BJT transistors.