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BDW23CTU

BDW23CTU

BDW23CTU

ON Semiconductor

BDW23CTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BDW23CTU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BDW23
Power - Max 50W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 3V @ 60mA, 6A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 6A
BDW23CTU Product Details

BDW23CTU Overview


This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

BDW23CTU Features


the DC current gain for this device is 750 @ 2A 3V
the vce saturation(Max) is 3V @ 60mA, 6A

BDW23CTU Applications


There are a lot of ON Semiconductor BDW23CTU applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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