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BDW24BTU

BDW24BTU

BDW24BTU

ON Semiconductor

BDW24BTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BDW24BTU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BDW24
Power - Max 50W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 3V @ 60mA, 6A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 6A
BDW24BTU Product Details

BDW24BTU Overview


This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 60mA, 6A.TO-220-3 is the supplier device package for this product.Device displays Collector Emitter Breakdown (80V maximal voltage).

BDW24BTU Features


the DC current gain for this device is 750 @ 2A 3V
the vce saturation(Max) is 3V @ 60mA, 6A
the supplier device package of TO-220-3

BDW24BTU Applications


There are a lot of ON Semiconductor BDW24BTU applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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