BDW24BTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BDW24BTU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BDW24
Power - Max
50W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
3V @ 60mA, 6A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
6A
BDW24BTU Product Details
BDW24BTU Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 60mA, 6A.TO-220-3 is the supplier device package for this product.Device displays Collector Emitter Breakdown (80V maximal voltage).
BDW24BTU Features
the DC current gain for this device is 750 @ 2A 3V the vce saturation(Max) is 3V @ 60mA, 6A the supplier device package of TO-220-3
BDW24BTU Applications
There are a lot of ON Semiconductor BDW24BTU applications of single BJT transistors.