BCX70G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 550mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 5V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.As you can see, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.Collector current can be as low as 200mA volts at its maximum.

BCX70G Features

the DC current gain for this device is 120 @ 2mA 5V
a collector emitter saturation voltage of 550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 100MHz

BCX70G Applications

There are a lot of ON Semiconductor BCX70G applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface