2N5551RLRMG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 10mA 5V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (600mA).There is a transition frequency of 100MHz in the part.During maximum operation, collector current can be as low as 600mA volts.
2N5551RLRMG Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5551RLRMG Applications
There are a lot of ON Semiconductor 2N5551RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
