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BDX33B

BDX33B

BDX33B

ON Semiconductor

BDX33B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BDX33B Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 70W
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 10A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number BDX33
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 70W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A 3V
Current - Collector Cutoff (Max) 500μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2.5V @ 6mA, 3A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 2.5V
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 750
Continuous Collector Current 10A
RoHS Status Non-RoHS Compliant
Lead Free Lead Free
BDX33B Product Details

BDX33B Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 3A 3V.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.A VCE saturation (Max) of 2.5V @ 6mA, 3A means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at 10A for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.The part has a transition frequency of 3MHz.A breakdown input voltage of 80V volts can be used.Maximum collector currents can be below 10A volts.

BDX33B Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz

BDX33B Applications


There are a lot of ON Semiconductor BDX33B applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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