BDX33B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BDX33B Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 3 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
70W
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
10A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
BDX33
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
70W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 3A 3V
Current - Collector Cutoff (Max)
500μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2.5V @ 6mA, 3A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
2.5V
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Continuous Collector Current
10A
RoHS Status
Non-RoHS Compliant
Lead Free
Lead Free
BDX33B Product Details
BDX33B Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 3A 3V.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.A VCE saturation (Max) of 2.5V @ 6mA, 3A means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at 10A for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.The part has a transition frequency of 3MHz.A breakdown input voltage of 80V volts can be used.Maximum collector currents can be below 10A volts.
BDX33B Features
the DC current gain for this device is 750 @ 3A 3V a collector emitter saturation voltage of 2.5V the vce saturation(Max) is 2.5V @ 6mA, 3A the emitter base voltage is kept at 5V the current rating of this device is 10A a transition frequency of 3MHz
BDX33B Applications
There are a lot of ON Semiconductor BDX33B applications of single BJT transistors.