PMEM1505NG,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from NXP USA Inc. stock available on our website
SOT-23
PMEM1505NG,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
5-TSSOP, SC-70-5, SOT-353
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
125°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
40
Pin Count
5
JESD-30 Code
R-PDSO-G5
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power - Max
300mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN + Diode (Isolated)
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
15V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
420MHz
Frequency - Transition
420MHz
Power Dissipation-Max (Abs)
0.8W
RoHS Status
ROHS3 Compliant
PMEM1505NG,115 Product Details
PMEM1505NG,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 150 @ 100mA 2V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 50mA, 500mA.In the part, the transition frequency is 420MHz.Collector Emitter Breakdown occurs at 15VV - Maximum voltage.
PMEM1505NG,115 Features
the DC current gain for this device is 150 @ 100mA 2V the vce saturation(Max) is 250mV @ 50mA, 500mA a transition frequency of 420MHz
PMEM1505NG,115 Applications
There are a lot of NXP USA Inc. PMEM1505NG,115 applications of single BJT transistors.