MJW1302A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJW1302A Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 1 week ago)
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2010
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
-230V
Max Power Dissipation
200W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
-15A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 7A 5V
Current - Collector Cutoff (Max)
50μA ICBO
JEDEC-95 Code
TO-247AD
Vce Saturation (Max) @ Ib, Ic
2V @ 1A, 10A
Collector Emitter Breakdown Voltage
230V
Current - Collector (Ic) (Max)
15A
Transition Frequency
30MHz
Collector Emitter Saturation Voltage
400mV
Collector Base Voltage (VCBO)
230V
Emitter Base Voltage (VEBO)
5V
hFE Min
50
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
MJW1302A Product Details
MJW1302A Overview
In this device, the DC current gain is 50 @ 7A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 1A, 10A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.The current rating of this fuse is -15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.In extreme cases, the collector current can be as low as 15A volts.
MJW1302A Features
the DC current gain for this device is 50 @ 7A 5V a collector emitter saturation voltage of 400mV the vce saturation(Max) is 2V @ 1A, 10A the emitter base voltage is kept at 5V the current rating of this device is -15A a transition frequency of 30MHz
MJW1302A Applications
There are a lot of ON Semiconductor MJW1302A applications of single BJT transistors.