BDX54CG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BDX54CG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
6.000006g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
65W
Peak Reflow Temperature (Cel)
260
Current Rating
-8A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BDX54
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
65W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 3A 3V
Current - Collector Cutoff (Max)
500μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2V @ 12mA, 3A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
20MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Height
15.75mm
Length
10.53mm
Width
4.83mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.024000
$3.024
10
$2.852830
$28.5283
100
$2.691349
$269.1349
500
$2.539009
$1269.5045
1000
$2.395291
$2395.291
BDX54CG Product Details
BDX54CG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 12mA, 3A.An emitter's base voltage can be kept at 5V to gain high efficiency.The current rating of this fuse is -8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 20MHz.A maximum collector current of 8A volts can be achieved.
BDX54CG Features
the DC current gain for this device is 750 @ 3A 3V a collector emitter saturation voltage of 2V the vce saturation(Max) is 2V @ 12mA, 3A the emitter base voltage is kept at 5V the current rating of this device is -8A a transition frequency of 20MHz
BDX54CG Applications
There are a lot of ON Semiconductor BDX54CG applications of single BJT transistors.