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BDX54CG

BDX54CG

BDX54CG

ON Semiconductor

BDX54CG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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BDX54CG Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 65W
Peak Reflow Temperature (Cel) 260
Current Rating -8A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BDX54
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 65W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A 3V
Current - Collector Cutoff (Max) 500μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 20MHz
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 750
Height 15.75mm
Length 10.53mm
Width 4.83mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.024000 $3.024
10 $2.852830 $28.5283
100 $2.691349 $269.1349
500 $2.539009 $1269.5045
1000 $2.395291 $2395.291
BDX54CG Product Details

BDX54CG Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 12mA, 3A.An emitter's base voltage can be kept at 5V to gain high efficiency.The current rating of this fuse is -8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 20MHz.A maximum collector current of 8A volts can be achieved.

BDX54CG Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 20MHz

BDX54CG Applications


There are a lot of ON Semiconductor BDX54CG applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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