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BF422G

BF422G

BF422G

ON Semiconductor

BF422G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BF422G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Contact PlatingCopper, Silver, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 250V
Max Power Dissipation830mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating50mA
Frequency 60MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BF422
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation830mW
Transistor Application AMPLIFIER
Gain Bandwidth Product60MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA 20V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage250V
Transition Frequency 60MHz
Collector Emitter Saturation Voltage500mV
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
Height 6.35mm
Length 6.35mm
Width 6.35mm
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:4803 items

BF422G Product Details

BF422G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 25mA 20V.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 50mA.As a result, the part has a transition frequency of 60MHz.Collector current can be as low as 50mA volts at its maximum.

BF422G Features


the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 60MHz

BF422G Applications


There are a lot of ON Semiconductor BF422G applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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