2N6660JTXV02

new-10%

Manufacturer part number:2N6660JTXV02

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD

Case Package:SOT-23

Datasheet:2N6660JTXV02 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	WIRE
Pin Count	2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	725mW Ta 6.25W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	725mW
FET Type	N-Channel
Transistor Application	AMPLIFIER
Rds On (Max) @ Id, Vgs	3 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Current - Continuous Drain (Id) @ 25°C	990mA Tc
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	990mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.99A
Drain-source On Resistance-Max	3Ohm
DS Breakdown Voltage-Min	60V
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant