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BU407HTU

BU407HTU

BU407HTU

ON Semiconductor

BU407HTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BU407HTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 60W
Transistor Type NPN
Current - Collector Cutoff (Max) 5mA
Vce Saturation (Max) @ Ib, Ic 1V @ 800mA, 5A
Voltage - Collector Emitter Breakdown (Max) 150V
Current - Collector (Ic) (Max) 7A
Frequency - Transition 10MHz
BU407HTU Product Details

BU407HTU Overview


As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 800mA, 5A.Supplier device package TO-220-3 comes with the product.Collector Emitter Breakdown occurs at 150VV - Maximum voltage.

BU407HTU Features


the vce saturation(Max) is 1V @ 800mA, 5A
the supplier device package of TO-220-3

BU407HTU Applications


There are a lot of ON Semiconductor BU407HTU applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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