BU407HTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BU407HTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
60W
Transistor Type
NPN
Current - Collector Cutoff (Max)
5mA
Vce Saturation (Max) @ Ib, Ic
1V @ 800mA, 5A
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
7A
Frequency - Transition
10MHz
BU407HTU Product Details
BU407HTU Overview
As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 800mA, 5A.Supplier device package TO-220-3 comes with the product.Collector Emitter Breakdown occurs at 150VV - Maximum voltage.
BU407HTU Features
the vce saturation(Max) is 1V @ 800mA, 5A the supplier device package of TO-220-3
BU407HTU Applications
There are a lot of ON Semiconductor BU407HTU applications of single BJT transistors.