BUH51 Overview
This device has a DC current gain of 8 @ 1A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).Single BJT transistor contains a transSingle BJT transistorion frequency of 23MHz.When collector current reaches its maximum, it can reach 3A volts.
BUH51 Features
the DC current gain for this device is 8 @ 1A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 3A
a transition frequency of 23MHz
BUH51 Applications
There are a lot of ON Semiconductor BUH51 applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
