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NSCT2222ALT1G

NSCT2222ALT1G

NSCT2222ALT1G

Rochester Electronics, LLC

NSCT2222ALT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

NSCT2222ALT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Power - Max 225mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 600mA
Frequency - Transition 300MHz
RoHS Status Non-RoHS Compliant
NSCT2222ALT1G Product Details

NSCT2222ALT1G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Supplier package SOT-23-3 (TO-236) contains the product.There is a 40V maximal voltage in the device due to collector-emitter breakdown.

NSCT2222ALT1G Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of SOT-23-3 (TO-236)

NSCT2222ALT1G Applications


There are a lot of Rochester Electronics, LLC NSCT2222ALT1G applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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