BDX33C-S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 3A 3V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V can result in a high level of efficiency.TO-220 is the supplier device package for this product.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.A maximum collector current of 10A volts is possible.
BDX33C-S Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the supplier device package of TO-220
BDX33C-S Applications
There are a lot of Bourns Inc. BDX33C-S applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver