BUL45D2G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10 @ 2A 1V.A collector emitter saturation voltage of 460mV ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 12V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (5A).There is a transition frequency of 13MHz in the part.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

BUL45D2G Features

the DC current gain for this device is 10 @ 2A 1V
a collector emitter saturation voltage of 460mV
the vce saturation(Max) is 500mV @ 400mA, 2A
the emitter base voltage is kept at 12V
the current rating of this device is 5A
a transition frequency of 13MHz

BUL45D2G Applications

There are a lot of ON Semiconductor BUL45D2G applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter