BC857AW,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BC857AW,135 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC857
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
Collector-Base Capacitance-Max
5pF
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.144108
$0.144108
10
$0.135951
$1.35951
100
$0.128255
$12.8255
500
$0.120996
$60.498
1000
$0.114148
$114.148
BC857AW,135 Product Details
BC857AW,135 Overview
This device has a DC current gain of 125 @ 2mA 5V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.Emitter base voltages of 5V can achieve high levels of efficiency.In this part, there is a transition frequency of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC857AW,135 Features
the DC current gain for this device is 125 @ 2mA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA the emitter base voltage is kept at 5V a transition frequency of 100MHz
BC857AW,135 Applications
There are a lot of Nexperia USA Inc. BC857AW,135 applications of single BJT transistors.