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2N5089 PBFREE

  • 2N5089 PBFREE
  • 2N5089 PBFREE

2N5089 PBFREE

2N5089 PBFREE

Central Semiconductor Corp

2N5089 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N5089 PBFREE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 625mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 100μA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 50mA
Frequency - Transition 50MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.401000 $0.401
10 $0.378302 $3.78302
100 $0.356889 $35.6889
500 $0.336687 $168.3435
1000 $0.317630 $317.63
2N5089 PBFREE Product Details

2N5089 PBFREE Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 400 @ 100μA 5V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 1mA, 10mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2N5089 PBFREE Features


the DC current gain for this device is 400 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA

2N5089 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N5089 PBFREE applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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