CPH3144-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
CPH3144-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-96
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
900mW
Reach Compliance Code
not_compliant
Power - Max
900mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
260mV
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
260mV @ 75mA, 1.5A
Collector Emitter Breakdown Voltage
30V
Frequency - Transition
440MHz
Emitter Base Voltage (VEBO)
5V
hFE Min
200
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.809758
$2.809758
10
$2.650715
$26.50715
100
$2.500675
$250.0675
500
$2.359127
$1179.5635
1000
$2.225591
$2225.591
CPH3144-TL-E Product Details
CPH3144-TL-E Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 260mV @ 75mA, 1.5A.An emitter's base voltage can be kept at 5V to gain high efficiency.During maximum operation, collector current can be as low as 2A volts.
CPH3144-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 260mV @ 75mA, 1.5A the emitter base voltage is kept at 5V
CPH3144-TL-E Applications
There are a lot of ON Semiconductor CPH3144-TL-E applications of single BJT transistors.