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CPH3205-M-TL-E

  • CPH3205-M-TL-E
  • CPH3205-M-TL-E

CPH3205-M-TL-E

CPH3205-M-TL-E

ON Semiconductor

CPH3205-M-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

CPH3205-M-TL-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 900mW
Power - Max 900mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 210mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 210mV @ 100mA, 2A
Collector Emitter Breakdown Voltage 50V
Frequency - Transition 380MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
CPH3205-M-TL-E Product Details

CPH3205-M-TL-E Overview


DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 210mV @ 100mA, 2A.The maximum collector current is 3A volts.

CPH3205-M-TL-E Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 210mV @ 100mA, 2A

CPH3205-M-TL-E Applications


There are a lot of ON Semiconductor CPH3205-M-TL-E applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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