CPH3216-TL-EX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
CPH3216-TL-EX Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Packaging
Tape & Reel (TR)
Published
2015
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
900mW
Power - Max
900mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
190mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
190mV @ 10mA, 500mA
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
420MHz
RoHS Status
ROHS3 Compliant
CPH3216-TL-EX Product Details
CPH3216-TL-EX Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
CPH3216-TL-EX Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 190mV @ 10mA, 500mA
CPH3216-TL-EX Applications
There are a lot of ON Semiconductor CPH3216-TL-EX applications of single BJT transistors.