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CPH3216-TL-EX

CPH3216-TL-EX

CPH3216-TL-EX

ON Semiconductor

CPH3216-TL-EX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

CPH3216-TL-EX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 900mW
Power - Max 900mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 190mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 190mV @ 10mA, 500mA
Collector Emitter Breakdown Voltage 50V
Frequency - Transition 420MHz
RoHS Status ROHS3 Compliant
CPH3216-TL-EX Product Details

CPH3216-TL-EX Overview


In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

CPH3216-TL-EX Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 190mV @ 10mA, 500mA

CPH3216-TL-EX Applications


There are a lot of ON Semiconductor CPH3216-TL-EX applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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