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CPH6442-TL-W

CPH6442-TL-W

CPH6442-TL-W

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 43m Ω @ 3A, 10V ±20V 1040pF @ 20V 20nC @ 10V 60V SOT-23-6 Thin, TSOT-23-6

SOT-23

CPH6442-TL-W Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 7 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Additional Feature ESD PROTECTED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.6W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 43m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 20V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 18ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.043Ohm
Pulsed Drain Current-Max (IDM) 24A
DS Breakdown Voltage-Min 60V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.18578 $0.55734
6,000 $0.17440 $1.0464
15,000 $0.16301 $2.44515
30,000 $0.15504 $4.6512
CPH6442-TL-W Product Details

CPH6442-TL-W Overview


A device's maximal input capacitance is 1040pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6A, which represents the maximum continuous current it can conduct.In this device, the drain current is 6A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 80 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 24A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 10V).

CPH6442-TL-W Features


a continuous drain current (ID) of 6A
the turn-off delay time is 80 ns
based on its rated peak drain current 24A.
a 60V drain to source voltage (Vdss)


CPH6442-TL-W Applications


There are a lot of ON Semiconductor
CPH6442-TL-W applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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