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SI1303EDL-T1-E3

SI1303EDL-T1-E3

SI1303EDL-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 670MA SOT323-3

SOT-23

SI1303EDL-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 290mW Ta
Element Configuration Single
Power Dissipation 290mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 430m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 670mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Rise Time 410ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 410 ns
Turn-Off Delay Time 560 ns
Continuous Drain Current (ID) 670mA
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
RoHS Status ROHS3 Compliant

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