SSP45N20B_FP001

new-10%

Manufacturer part number:SSP45N20B_FP001

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 200V 35A TO-220

Case Package:SOT-23

Datasheet:SSP45N20B_FP001 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2001
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	176W Tc
Element Configuration	Single
Power Dissipation	176W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	65mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	173nC @ 10V
Rise Time	340ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	270 ns
Turn-Off Delay Time	360 ns
Continuous Drain Current (ID)	35A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	200V
Input Capacitance	4.3nF
Drain to Source Resistance	65mOhm
Rds On Max	65 mΩ
RoHS Status	RoHS Compliant