MJE13005 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
MJE13005 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
2W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 2A 5V
Vce Saturation (Max) @ Ib, Ic
1V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
4A
Frequency - Transition
4MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.479000
$2.479
10
$2.338679
$23.38679
100
$2.206301
$220.6301
500
$2.081416
$1040.708
1000
$1.963600
$1963.6
MJE13005 PBFREE Product Details
MJE13005 PBFREE Overview
In this device, the DC current gain is 8 @ 2A 5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 1A, 4A.Device displays Collector Emitter Breakdown (400V maximal voltage).
MJE13005 PBFREE Features
the DC current gain for this device is 8 @ 2A 5V the vce saturation(Max) is 1V @ 1A, 4A
MJE13005 PBFREE Applications
There are a lot of Central Semiconductor Corp MJE13005 PBFREE applications of single BJT transistors.