FMMT619TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT619TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Manufacturer Package Identifier
FMMT619TA
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
50V
Max Power Dissipation
625mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
2A
Frequency
165MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMT619
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Turn On Delay Time
170 ns
Transistor Application
SWITCHING
Gain Bandwidth Product
165MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Turn-Off Delay Time
750 ns
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
220mV @ 50mA, 2A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
165MHz
Collector Emitter Saturation Voltage
150mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
300
Continuous Collector Current
2A
Height
1.1mm
Length
3mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.20103
$0.60309
6,000
$0.18948
$1.13688
15,000
$0.17793
$2.66895
30,000
$0.17600
$5.28
FMMT619TA Product Details
FMMT619TA Overview
This device has a DC current gain of 200 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 150mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 220mV @ 50mA, 2A.Maintaining the continuous collector voltage at 2A is essential for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 2A.165MHz is present in the transition frequency.A breakdown input voltage of 50V volts can be used.When collector current reaches its maximum, it can reach 2A volts.
FMMT619TA Features
the DC current gain for this device is 200 @ 1A 2V a collector emitter saturation voltage of 150mV the vce saturation(Max) is 220mV @ 50mA, 2A the emitter base voltage is kept at 5V the current rating of this device is 2A a transition frequency of 165MHz
FMMT619TA Applications
There are a lot of Diodes Incorporated FMMT619TA applications of single BJT transistors.