MJE18004D2G Overview
In this device, the DC current gain is 6 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 380mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 400mA, 2A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (5A).In this part, there is a transition frequency of 13MHz.A maximum collector current of 5A volts is possible.
MJE18004D2G Features
the DC current gain for this device is 6 @ 2A 1V
a collector emitter saturation voltage of 380mV
the vce saturation(Max) is 750mV @ 400mA, 2A
the emitter base voltage is kept at 12V
the current rating of this device is 5A
a transition frequency of 13MHz
MJE18004D2G Applications
There are a lot of ON Semiconductor MJE18004D2G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
