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EFC2K103NUZTDG

EFC2K103NUZTDG

EFC2K103NUZTDG

ON Semiconductor

EFC2K103NUZTDG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

EFC2K103NUZTDG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 40 Weeks
Mounting Type Surface Mount
Package / Case 10-SMD, No Lead
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 3.3W Ta
FET Type 2 N-Channel (Dual) Common Drain
Rds On (Max) @ Id, Vgs 1.8m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Current - Continuous Drain (Id) @ 25°C 40A Ta
Gate Charge (Qg) (Max) @ Vgs 62nC @ 6V
Drain to Source Voltage (Vdss) 12V
FET Feature Logic Level Gate, 2.5V Drive
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.055000 $1.055
10 $0.995283 $9.95283
100 $0.938946 $93.8946
500 $0.885798 $442.899
1000 $0.835659 $835.659
EFC2K103NUZTDG Product Details

EFC2K103NUZTDG         Description

 

EFC2K103NUZTDG features a ultra low on?state resistance and high current with small and thin CSP package. It is best suited for 1?cell lithium?ion battery protection circuit.

 

EFC2K103NUZTDG               Applications


1?Cell Lithium?ion Battery Charging and Discharging Switch in battery protection circuit


EFC2K103NUZTDG                Features


Low Rss(on)

Small size and narrow width

Low Gate Charge

2kV ESD HBM

Common-Drain Type

ESD Diode-Protected Gate

RoHS compliance

 






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