EMF5XV6T5G

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Manufacturer part number:EMF5XV6T5G

Manufacturer:ON Semiconductor

Description:Bipolar Transistors - BJT BRT Dual NPN & PNP

Case Package:SOT-23

Datasheet:EMF5XV6T5G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	BUILT IN BIAS RESISTOR RATIO 1
Subcategory	Other Transistors
Max Power Dissipation	500mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Current Rating	100mA
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	EMF
Pin Count	6
Operating Temperature (Max)	150°C
Number of Elements	2
Polarity	NPN, PNP
Element Configuration	Dual
Power Dissipation	500mW
Halogen Free	Halogen Free
Transistor Type	1 NPN Pre-Biased, 1 PNP
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA 10V / 270 @ 10mA 2V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 300μA, 10mA / 250mV @ 10mA, 200mA
Collector Emitter Breakdown Voltage	12V
Voltage - Collector Emitter Breakdown (Max)	50V 12V
Current - Collector (Ic) (Max)	100mA 500mA
Collector Emitter Saturation Voltage	250mV
Max Breakdown Voltage	12V
Collector Base Voltage (VCBO)	50V
Emitter Base Voltage (VEBO)	6V
hFE Min	80
Resistor - Base (R1)	47k Ω
Resistor - Emitter Base (R2)	47k Ω
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free