FCH041N65F-F155

new-10%

Manufacturer part number:FCH041N65F-F155

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 650V 76A TO247

Case Package:SOT-23

Datasheet:FCH041N65F-F155 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	FRFET®, SuperFET® II
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Resistance	44mOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	595W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	60 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	41m Ω @ 38A, 10V
Vgs(th) (Max) @ Id	5V @ 7.6mA
Input Capacitance (Ciss) (Max) @ Vds	13020pF @ 100V
Current - Continuous Drain (Id) @ 25°C	76A Tc
Gate Charge (Qg) (Max) @ Vgs	294nC @ 10V
Rise Time	47ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	6.5 ns
Turn-Off Delay Time	190 ns
Continuous Drain Current (ID)	76A
JEDEC-95 Code	TO-247AB
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	228A
DS Breakdown Voltage-Min	650V
Avalanche Energy Rating (Eas)	2025 mJ
RoHS Status	ROHS3 Compliant