FCH072N60F

new-10%

Manufacturer part number:FCH072N60F

Manufacturer:ON Semiconductor

Description:FCH072N60F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FCH072N60F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Series	FRFET®, SuperFET® II
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	481W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	481W
Turn On Delay Time	43 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	72m Ω @ 26A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8660pF @ 100V
Current - Continuous Drain (Id) @ 25°C	52A Tc
Gate Charge (Qg) (Max) @ Vgs	215nC @ 10V
Rise Time	38ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	140 ns
Continuous Drain Current (ID)	52A
JEDEC-95 Code	TO-247AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.072Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	156A
Avalanche Energy Rating (Eas)	1128 mJ
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free