FCP190N60

new-10%

Manufacturer part number:FCP190N60

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 199m Ω @ 10A, 10V ±20V 2950pF @ 25V 74nC @ 10V 600V TO-220-3

Case Package:SOT-23

Datasheet:FCP190N60 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperFET® II
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	208W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	208W
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	199m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2950pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20.2A Tc
Gate Charge (Qg) (Max) @ Vgs	74nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	64 ns
Continuous Drain Current (ID)	20.2A
Threshold Voltage	2.5V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	60.6A
Avalanche Energy Rating (Eas)	400 mJ
Height	16.51mm
Length	10.67mm
Width	4.83mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free