IRL540A  Description

P-MOSFET NTMFS6H800NLT1G uses gate voltage to control drain current, which is characterized by simple driving circuit, low driving power, fast switching speed and high working frequency, but its current capacity is small, withstand low voltage.

IRL540A    Applications

low power electronic devices

IRL540A  FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current:10uA(Max.) VDs=100V+Lower RDSION):0.046Ω(Typ.)