FQA9N90-F109

new-10%

Manufacturer part number:FQA9N90-F109

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 900V 8.6A TO-3P

Case Package:SOT-23

Datasheet:FQA9N90-F109 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	QFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	240W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	240W
Turn On Delay Time	45 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.3 Ω @ 4.3A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8.6A Tc
Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Rise Time	100ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	80 ns
Turn-Off Delay Time	135 ns
Continuous Drain Current (ID)	8.6A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	900V
Avalanche Energy Rating (Eas)	900 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant