NDF04N60ZH

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Manufacturer part number:NDF04N60ZH

Manufacturer:ON Semiconductor

Description:NDF04N60ZH datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NDF04N60ZH Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 5 days ago)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	30W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Turn On Delay Time	13 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	640pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.8A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Rise Time	9ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	4.8A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	3A
Drain-source On Resistance-Max	2Ohm
Pulsed Drain Current-Max (IDM)	20A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	120 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free