NTMSD6N303R2G

new-10%

NTMSD6N303R2G

Manufacturer part number:NTMSD6N303R2G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 6A 8-SOIC

Case Package:SOT-23

Datasheet:NTMSD6N303R2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	OBSOLETE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	FETKY™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	6A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	32m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	950pF @ 24V
Current - Continuous Drain (Id) @ 25°C	6A Ta
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.032Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	30A
Avalanche Energy Rating (Eas)	325 mJ
FET Feature	Schottky Diode (Isolated)
RoHS Status	RoHS Compliant
Lead Free	Lead Free