STK22N6F3

new-10%

Manufacturer part number:STK22N6F3

Manufacturer:STMicroelectronics

Description:MOSFET N-channel 60 V 22 A PolarPAK

Case Package:SOT-23

Datasheet:STK22N6F3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PolarPak®
Number of Pins	10
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Base Part Number	STK22
Pin Count	10
JESD-30 Code	R-XDSO-N4
Number of Elements	1
Power Dissipation-Max	5.2W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5.2W
Case Connection	SOURCE
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	22A Tc
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	22A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.006Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	88A
Avalanche Energy Rating (Eas)	800 mJ
Nominal Vgs	4 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant