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2N7002LT1G

2N7002LT1G

2N7002LT1G

ON Semiconductor

2N7002LT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

2N7002LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 7.5Ohm
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 115mA
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 225mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 225mW
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 115mA Tc
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 115mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 2.5 V
Feedback Cap-Max (Crss) 5 pF
Height 1.11mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.046262 $0.046262
500 $0.034016 $17.008
1000 $0.028347 $28.347
2000 $0.026006 $52.012
5000 $0.024305 $121.525
10000 $0.022609 $226.09
15000 $0.021866 $327.99
50000 $0.021500 $1075
2N7002LT1G Product Details

2N7002LT1G Description


The 2N7002LT1G is a 60V N-channel tiny signal MOSFET with a power dissipation of 300mW and a drain current of 115mA.


2N7002LT1G Features


? AECQ101 qualified and PPAP capable 2V prefix for automotive and other applications requiring unique site and control change requirements (2V7002L)

? These products are lead-free, halogen-free, and RoHS compliant.


2N7002LT1G Applications


Industrial


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