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FDMS7660AS

FDMS7660AS

FDMS7660AS

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.4m Ω @ 25A, 10V ±20V 6120pF @ 15V 90nC @ 10V 8-PowerTDFN

SOT-23

FDMS7660AS Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®, SyncFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 83W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 83W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6120pF @ 15V
Current - Continuous Drain (Id) @ 25°C 26A Ta 42A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 26A
Threshold Voltage 1.9V
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0024Ohm
Drain to Source Breakdown Voltage 30V
Height 1.05mm
Length 5mm
Width 6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.73187 $2.19561
6,000 $0.69730 $4.1838
15,000 $0.67260 $10.089
FDMS7660AS Product Details

FDMS7660AS Description


FDMS7660AS is a 30v N-Channel PowerTrench? SyncFET?. The FDMS7660AS has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance. The onsemi FDMS7660AS has the added benefit of an efficient monolithic Schottky body diode.



FDMS7660AS Features


  • Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A

  • Max rDS(on) = 2.6 mΩ at VGS = 7 V, ID = 23 A

  • Advanced Package and Silicon combination for low rDS(on) and high efficiency

  • SyncFET Schottky Body Diode

  • MSL1 robust package design

  • 100% UIL tested

  • RoHS Compliant



FDMS7660AS Applications


  • Synchronous Rectifier for DC/DC Converters

  • Notebook Vcore/ GPU low-side switch

  • Networking Point of Load low-side switch

  • Telecom secondary side rectification


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