FDB2670

new-10%

Manufacturer part number:FDB2670

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 200V 19A TO-263AB

Case Package:SOT-23

Datasheet:FDB2670 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263AB
Operating Temperature	-65°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-65°C
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	19A
Number of Elements	1
Power Dissipation-Max	93W Tc
Element Configuration	Single
Power Dissipation	93W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	130mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1320pF @ 100V
Current - Continuous Drain (Id) @ 25°C	19A Ta
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	5ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	19A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Input Capacitance	1.32nF
Drain to Source Resistance	130mOhm
Rds On Max	130 mΩ
RoHS Status	RoHS Compliant
Lead Free	Lead Free