IRLL2705TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRLL2705TRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
40mOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
3.8A
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.1W
Case Connection
DRAIN
Turn On Delay Time
6.2 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
40m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
870pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3.8A Ta
Gate Charge (Qg) (Max) @ Vgs
48nC @ 10V
Rise Time
12ns
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±16V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
3.8A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
16V
Drain Current-Max (Abs) (ID)
5.2A
Drain to Source Breakdown Voltage
55V
Dual Supply Voltage
55V
Recovery Time
88 ns
Max Junction Temperature (Tj)
150°C
Nominal Vgs
2 V
Height
1.8mm
Length
6.6802mm
Width
6.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.14000
$1.14
500
$1.1286
$564.3
1000
$1.1172
$1117.2
1500
$1.1058
$1658.7
2000
$1.0944
$2188.8
2500
$1.083
$2707.5
IRLL2705TRPBF Product Details
IRLL2705TRPBF Description
The IRLL2705TRPBF is a HEXFET? fifth generation single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation. The package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1W is possible in a typical surface-mount application.