TK8A60W,S4VX

new-10%

Manufacturer part number:TK8A60W,S4VX

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N CH 600V 8A TO-220SIS

Case Package:SOT-23

Datasheet:TK8A60W,S4VX Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220SIS
Operating Temperature	150°C TJ
Packaging	Tube
Published	2014
Series	DTMOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Capacitance	570pF
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	30W Tc
Element Configuration	Single
Power Dissipation	30W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	3.7V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds	570pF @ 300V
Current - Continuous Drain (Id) @ 25°C	8A Ta
Gate Charge (Qg) (Max) @ Vgs	18.5nC @ 10V
Rise Time	20ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	5.5 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	8A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Input Capacitance	570pF
FET Feature	Super Junction
Drain to Source Resistance	420mOhm
Rds On Max	500 mΩ
RoHS Status	RoHS Compliant