FDB8030L Description

The FDB8030L is a logic level N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and a lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency. The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

FDB8030L Features

• 80 A, 30 V. RDS(ON) = 0.0035 ? @ VGS = 10 V

                        RDS(ON) = 0.0045 ? @ VGS = 4.5 V

• Critical DC electrical parameters specified at elevated temperature

• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor

• High performance trench technology for extremely low RDS(ON)

• 175°C maximum junction temperature rating

FDB8030L Applications

• Induction furnaces

• Arc furnaces and arc welders

• Steel rolling mills

• Large motors with periodic loading

• Thyristor drives

• Railway traction which is mostly through d.c. drives

• Industrial