FDB8441 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDB8441 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
2
Weight
1.31247g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
2.5MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
40V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
80A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
300W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300W
Case Connection
DRAIN
Turn On Delay Time
23 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
15000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
28A Ta 120A Tc
Gate Charge (Qg) (Max) @ Vgs
280nC @ 10V
Rise Time
24ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
17.9 ns
Turn-Off Delay Time
75 ns
Reverse Recovery Time
52 ns
Continuous Drain Current (ID)
28A
Threshold Voltage
2.8V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
40V
Dual Supply Voltage
40V
Avalanche Energy Rating (Eas)
947 mJ
Nominal Vgs
2.8 V
Height
4.83mm
Length
10.67mm
Width
9.65mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.63000
$3.63
500
$3.5937
$1796.85
1000
$3.5574
$3557.4
1500
$3.5211
$5281.65
2000
$3.4848
$6969.6
2500
$3.4485
$8621.25
FDB8441 Product Details
FDB8441 Description
The N-channel MOSFETFDB8441 is manufactured using on Semiconductor's advanced POWERTRENCH process, which is tailor-made to minimize ON-state resistance while maintaining excellent switching performance.
FDB8441 Features
Typ rDS(on) = 1.9mΩ at VGS = 10V, ID = 80A
Typ Qg(10) = 215nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
FDB8441 Applications
This product is general usage and suitable for many different applications.