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FDB8441

FDB8441

FDB8441

ON Semiconductor

FDB8441 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDB8441 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 2
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 2.5MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 40V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 80A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 28A Ta 120A Tc
Gate Charge (Qg) (Max) @ Vgs 280nC @ 10V
Rise Time 24ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 17.9 ns
Turn-Off Delay Time 75 ns
Reverse Recovery Time 52 ns
Continuous Drain Current (ID) 28A
Threshold Voltage 2.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Dual Supply Voltage 40V
Avalanche Energy Rating (Eas) 947 mJ
Nominal Vgs 2.8 V
Height 4.83mm
Length 10.67mm
Width 9.65mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.63000 $3.63
500 $3.5937 $1796.85
1000 $3.5574 $3557.4
1500 $3.5211 $5281.65
2000 $3.4848 $6969.6
2500 $3.4485 $8621.25
FDB8441 Product Details

FDB8441  Description

 

The N-channel MOSFET FDB8441 is manufactured using on Semiconductor's advanced POWERTRENCH process, which is tailor-made to minimize ON-state resistance while maintaining excellent switching performance.

 


FDB8441  Features

 

Typ rDS(on) = 1.9mΩ at VGS = 10V, ID = 80A

Typ Qg(10) = 215nC at VGS = 10V

Low Miller Charge

Low Qrr Body Diode

UIS Capability (Single Pulse and Repetitive Pulse)

Qualified to AEC Q101

RoHS Compliant

 

FDB8441  Applications

 

This product is general usage and suitable for many different applications.


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