FDC2512 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDC2512 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
425MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
150V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
1.4A
Number of Elements
1
Number of Channels
1
Voltage
150V
Power Dissipation-Max
1.6W Ta
Element Configuration
Single
Current
14A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.6W
Turn On Delay Time
6.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
425m Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
344pF @ 75V
Current - Continuous Drain (Id) @ 25°C
1.4A Ta
Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V
Rise Time
3.5ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
4 ns
Turn-Off Delay Time
22 ns
Continuous Drain Current (ID)
1.4A
Threshold Voltage
2.6V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
150V
Dual Supply Voltage
150V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
2.6 V
Height
1.1mm
Length
3mm
Width
1.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.68000
$0.68
500
$0.6732
$336.6
1000
$0.6664
$666.4
1500
$0.6596
$989.4
2000
$0.6528
$1305.6
2500
$0.646
$1615
FDC2512 Product Details
FDC2512 Overview
The maximum input capacitance of this device is 344pF @ 75V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 22 ns.Turn-on delay time is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 6.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Threshold voltage is?the point at which an electrical device is set to activate any one of its operations, and this transistor has 2.6V threshold voltage. A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
FDC2512 Features
a continuous drain current (ID) of 1.4A a drain-to-source breakdown voltage of 150V voltage the turn-off delay time is 22 ns a threshold voltage of 2.6V
FDC2512 Applications
There are a lot of ON Semiconductor FDC2512 applications of single MOSFETs transistors.