FQP34N20

new-10%

Manufacturer part number:FQP34N20

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 75m Ω @ 15.5A, 10V ±30V 3100pF @ 25V 78nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:FQP34N20 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Factory Lead Time	5 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	QFET®
Published	2000
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	31A
Number of Elements	1
Power Dissipation-Max	180W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	180W
Turn On Delay Time	40 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	75m Ω @ 15.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	31A Tc
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Rise Time	280ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	115 ns
Turn-Off Delay Time	125 ns
Continuous Drain Current (ID)	31A
Threshold Voltage	5V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.075Ohm
Drain to Source Breakdown Voltage	200V
Avalanche Energy Rating (Eas)	640 mJ
Nominal Vgs	5 V
Height	9.4mm
Length	10.1mm
Width	4.7mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free