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STP7N105K5

STP7N105K5

STP7N105K5

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 2 Ω @ 2A, 10V ±30V 380pF @ 100V 17nC @ 10V 1050V TO-220-3

SOT-23

STP7N105K5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH5™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP7N
Configuration Single
Number of Channels 1
Power Dissipation-Max 110W Tc
Power Dissipation 110W
Turn On Delay Time 17.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 1050V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 1.05kV
Max Junction Temperature (Tj) 150°C
Height 19.68mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $1.61700 $1.617
STP7N105K5 Product Details

STP7N105K5 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 380pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1.05kV, and this device has a drainage-to-source breakdown voltage of 1.05kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 4A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 43 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 1050V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STP7N105K5 Features


a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 1.05kV voltage
the turn-off delay time is 43 ns
a 1050V drain to source voltage (Vdss)


STP7N105K5 Applications


There are a lot of STMicroelectronics
STP7N105K5 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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