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STP7N105K5

STP7N105K5

STP7N105K5

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 2 Ω @ 2A, 10V ±30V 380pF @ 100V 17nC @ 10V 1050V TO-220-3

SOT-23

STP7N105K5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH5™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP7N
Configuration Single
Number of Channels 1
Power Dissipation-Max 110W Tc
Power Dissipation 110W
Turn On Delay Time 17.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 1050V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 1.05kV
Max Junction Temperature (Tj) 150°C
Height 19.68mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
STP7N105K5 Product Details

STP7N105K5 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 380pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1.05kV, and this device has a drainage-to-source breakdown voltage of 1.05kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 4A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 43 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 1050V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STP7N105K5 Features


a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 1.05kV voltage
the turn-off delay time is 43 ns
a 1050V drain to source voltage (Vdss)


STP7N105K5 Applications


There are a lot of STMicroelectronics
STP7N105K5 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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